Datasheets : Pt1k - temperature | Bi2H - humidity | Platform BI2 | Platform KBI2 | Platform BE3.
Temperature sensor Pt1K
Tesla Blatná a.s. manufactures platinum temperature sensors (resistance temperature sensors) for industrial and scientific applications. Temperature sensors are constructed as thin-film resistance sensors on a ceramic substrate. This design has a number of advantages over conventional wound platinum wire sensors. The thin-film sensor design is simpler, has greater mechanical resistance and offers greater variability in use. For the purpose of the resistance temperature sensor, platinum has excellent physical parameters - thermal stability, can withstand temperatures ranging from -200 ° C to 1000 ° C. The produced platinum sensors have a temperature coefficient (TKR) of 3850 ppm / K and comply with the standard ČSN EN 60 751. The basic nominal value of the produced temperature resistors is 1000 Ω. We can offer temperature resistors of various sizes and nominal resistances according to customer specifications.
For the detection of specific media, we offer a variety of platforms on a ceramic substrate. The construction of interdigital gold electrodes labeled BI2 or a combined system labeled KBI2 consisting of IDE electrodes, heating element and temperature sensor in the platinum layer offers the possibility of applying sensitive layers by spin, drop-coating method. The sensor platforms are equipped with silver wire terminals. The metal layers are formed by thin and / or thick layer technology by sputtering and screen printing.
Sensor Platform KBI2
The KBI2 platform consists of a Pt1K temperature sensor, a heating element and an interdigital electrode structure. All elements consist of a thin layer of platinum on a ceramic substrate. The heating element and temperature sensor are protected by a thin insulation layer. Sensitive layers can be deposited on a non-passivated interdigital structure by screen printing, spin-coating, drop-coating, etc.
Sensor Platform BI2
Gold electrodes are deposited on the ceramic substrate to which sensitive layers can be applied by thick- or thin-film technology. The electrode system allows the use of a variety of sensitive layers. Different interdigital electrode topologies can be manufactured to customer specifications.
Humidity sensor BI2H
The BI2H humidity sensor is a semiconductor sensor designed for measuring relative humidity. The physical principle of measurement is based on the properties of an organic semiconductor that changes its impedance due to moisture. The changing impedance of the sensitive layer due to moisture can be easily evaluated electrically.
- humidity sensor with organic semiconductor layer
- measuring range from 20 to 90% RH at temperatures from 0 to 60 ° C
- Inlets 10 mm Ag wire ø 0,25 mm or according to customer specification
- simple evaluation
- compact dimensions
- No calibration required
- economic execution / economic design